Electrical Study of Changes in Impedance and Internal Parameters of Nano Structures of Molybdenum Disulfide Semiconductor Type (MoS2-2H/3R) with Changes in TemperaturePages 303-314
Hussein AlHussein Abstract:
MoS2 nanostructures were prepared using the hydrothermal method by reacting ammonium heptamolybdate tetrahydrate ((NH4)6Mo7O244H2O) with citric acid monohydrate (C6H8O7H2O) in distilled water with the presence of sodium sulfide (Na2S), we have found from the Arenos diagram that the value of the activation energy of (MoS2 -2H/3R) is low and equal to Ea= 0.0505 (e.V). From the atomic force microscope (AFM) images, we found that the size of the surface aggregates of the sample (table - MoS2-2H/3R) ranges between (100-150) n m. From studying the changes in the impedance with different temperatures (T = 15, 30, and 60), we found that impedance is inversely proportional to both the applied frequency and the temperature, and at the frequencies the response corresponding to the temperature reaches a value of (Z = 20 K.Ω, T = 15°C). ) and at temperature (Z = 8.02 K.Ω, T = 30 °C), and at (Z = 17.1 K.Ω, T = 60 °C), It has been shown that the number of electric charge carriers (Nd) increases with increasing temperature. On the contrary, we found a decrease in the number of electronic traps (Ns) and a decrease in the relaxation time τP with increasing temperature. Keywords: MoS2, Zeta sizer nano series, Impedance, Electronic traps, Electric charge carriers, Activation energy, Atomic force microscopy (AFM)
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