Abstract:
Nitrogen-doped tetrahedral amorphous carbon (N-taC) thin films were prepared on silicon (Si) substrates via filtered cathodic vacuum arc (FCVA) deposition by varying the N2 flow rate from 10 to 60 sccm to get different N contents in the films. The electrochemical potential windows (EPWs) of the N-taC thin films were measured in potassium chloride (KCl) solution by applying a linear sweep cyclic voltammetric (LSCV) technique. The square wave anodic stripping voltammograms (SWASVs) of lead (Pb) and copper (Cu) on the film surfaces were acquired by varying deposition time and potential and metal ion concentration. The effects of N content on the EPWs and SWASV performance of the N-taC thin films were also investigated. The results clearly showed the apparent influences of deposition time and potential, metal ion concentration, and N content on the SWASVs of both Pb and Cu obtained by the N-taC thin films. It was found that the N-taC thin films were able to detect Pb2+ and Cu2+ ions in the KCl solution at the µM level.
Keywords: N-taC thin films, N doping, LSCV, SWASV, Pb2+ and Cu2+ ions
Recieved: 21.12.2024,
Revised: 01.03.2025,
Accepted: 11.04.2025
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